Current-temperature characteristics of low-temperature-sputtered (Ba,Sr)TiO3 films post treated by rapid thermal annealing
| dc.citation.epage | 225 | en_US |
| dc.citation.spage | 217 | en_US |
| dc.citation.volume | 47 | en_US |
| dc.contributor.author | Shye, DC | en_US |
| dc.contributor.author | Chen, JS | en_US |
| dc.contributor.author | Kuo, MW | en_US |
| dc.contributor.author | Chou, BCS | en_US |
| dc.contributor.author | Jan, CK | en_US |
| dc.contributor.author | Wu, MF | en_US |
| dc.contributor.author | Chiou, BS | en_US |
| dc.contributor.author | Cheng, HC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:05Z | |
| dc.date.available | 2014-12-08T15:43:05Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.abstract | This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba0.8Sr0.2)TiO3 (BST) film post treated by rapid thermal annealing (RTA) in O-2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST/Pt multifilm. As the results, the current density of the RTA-treated BST film was greatly reduced owing to compensation of oxygen vacancies. The RTA-treated BST thin film biased at negative voltage exhibits a negative temperature-coefficient-resistivity (NTCR) behavior, but, intriguingly, that biased at positive voltage reveals a positive temperature-coefficient-resistivity (PTCR) behavior. According to the leakage current analysis, the Schottky emission dominates the negative biased current at upper interface, but the Heywang barrier scattering confines the positive biased current. | en_US |
| dc.identifier.doi | 10.1080/10584580215416 | en_US |
| dc.identifier.issn | 1058-4587 | en_US |
| dc.identifier.journal | INTEGRATED FERROELECTRICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1080/10584580215416 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29155 | |
| dc.identifier.wosnumber | WOS:000179829400025 | |
| dc.language.iso | en_US | en_US |
| dc.subject | (Ba0.8Sr0.2)TiO3 | en_US |
| dc.subject | rapid thermal annealing (RTA) | en_US |
| dc.subject | NTCR | en_US |
| dc.subject | PTCR | en_US |
| dc.subject | Schottky emission | en_US |
| dc.subject | Heywang barrier | en_US |
| dc.title | Current-temperature characteristics of low-temperature-sputtered (Ba,Sr)TiO3 films post treated by rapid thermal annealing | en_US |
| dc.type | Article; Proceedings Paper | en_US |