Process of producing group III nitride based reflectors
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20070128743 | zh_TW |
| dc.contributor.author | Huang, Gensheng | en_US |
| dc.contributor.author | Yao, Hsin-Hung | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.date.accessioned | 2014-12-16T06:16:05Z | |
| dc.date.available | 2014-12-16T06:16:05Z | |
| dc.date.issued | 2007-06-07 | en_US |
| dc.description.abstract | To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors. | zh_TW |
| dc.identifier.govdoc | H01L021/00 | zh_TW |
| dc.identifier.govdoc | H01L033/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105652 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Process of producing group III nitride based reflectors | zh_TW |
| dc.type | Patents | en_US |