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Superconducting NdBa2Cu3O7-delta thin films grown on bare (1(1)over-bar02) sapphire by pulsed laser deposition

dc.citation.epage561en_US
dc.citation.issue3-4en_US
dc.citation.spage557en_US
dc.citation.volume131en_US
dc.contributor.authorCheng, TYen_US
dc.contributor.authorLin, PIen_US
dc.contributor.authorChen, SFen_US
dc.contributor.authorLiu, SJen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorWang, RLen_US
dc.contributor.authorLi, HCen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.date.accessioned2014-12-08T15:41:00Z
dc.date.available2014-12-08T15:41:00Z
dc.date.issued2003-05-01en_US
dc.description.abstractSuperconducting NdBa2Cu3O7-delta (NBCO) thin films with T-c=89 K have been. successfully grown on bare (1 (1) over bar 02) sapphire substrates by pulsed laser deposition (PLD). The X-ray diffraction results show that the as-grown NBCO films are all c-axis oriented with no observable second phase. The c-axis parameter decreases monotonically with increasing the deposition temperature (T-s), suggesting that the corresponding degradation of T-c for T-s>790degreesC might not originate from oxygen deficiency. It is conceived that the film-substrate reaction that occurring at the interface may cause Ba-deficiency and hence enhance Nd-Ba antisite substitutions.en_US
dc.identifier.doi10.1023/A:1022967706861en_US
dc.identifier.issn0022-2291en_US
dc.identifier.journalJOURNAL OF LOW TEMPERATURE PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1023/A:1022967706861en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27928
dc.identifier.wosnumberWOS:000181768000058
dc.language.isoen_USen_US
dc.titleSuperconducting NdBa2Cu3O7-delta thin films grown on bare (1(1)over-bar02) sapphire by pulsed laser depositionen_US
dc.typeArticle; Proceedings Paperen_US

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