新世代鐵電非揮發性記憶元件(II)
| dc.contributor.author | 曾俊元 | en_US |
| dc.contributor.author | TSEUNG-YUENTSENG | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:34:53Z | |
| dc.date.available | 2014-12-13T10:34:53Z | |
| dc.date.issued | 2002 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC91-2215-E009-066 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=784481&docId=150792 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/93059 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 新世代鐵電非揮發性記憶元件(II) | zh_TW |
| dc.title | Next Generation Non-Volatile Ferroelectric Memory(II) | en_US |
| dc.type | Plan | en_US |