AlGaInP light-emitting diodes with metal substrate fabricated by wafer bonding

dc.citation.epage	153	en_US
dc.citation.issue	19	en_US
dc.citation.spage	144	en_US
dc.citation.volume	2003	en_US
dc.contributor.author	Peng, WC	en_US
dc.contributor.author	Wu, WCS	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.date.accessioned	2014-12-08T15:26:16Z
dc.date.available	2014-12-08T15:26:16Z
dc.date.issued	2003	en_US
dc.description.abstract	AlGaInP LED with copper Substrate has been successfully fabricated by the wafer bonding technique in this study. it was found that bonded AlGaInP LED devices could be operated in a higher injection forward current above 500mA. Such bonding enhanced the device performance significantly. The joule heating exhibiting in conventional LEDs was eliminated because the copper substrate provided a good heat sink. Thus, the thermal degradation of the conventional LEDs was improved.	en_US
dc.identifier.isbn	1-56677-402-0	en_US
dc.identifier.journal	SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/18655
dc.identifier.wosnumber	WOS:000189426900017
dc.language.iso	en_US	en_US
dc.title	AlGaInP light-emitting diodes with metal substrate fabricated by wafer bonding	en_US
dc.type	Proceedings Paper	en_US

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