The electrical characteristics of high-kappa Pr2O3 thin-film transistors with nitrogen-implanted polysilicon films

dc.citation.epage	1848	en_US
dc.citation.spage	1845	en_US
dc.contributor.author	Deng, C. -K.	en_US
dc.contributor.author	Chang, H. -R.	en_US
dc.contributor.author	Chiou, B. -S.	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:12:25Z
dc.date.available	2014-12-08T15:12:25Z
dc.date.issued	2007	en_US
dc.description.abstract	This paper demonstrates the poly-Si TFTs with high-kappa Pr2O3 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into alpha-Si film before solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of Pr2O3 poly-Si TFT implanted with the nitrogen dosage of 5x10(12) cm(-2) could be greatly improved. In addition, a good hot-harrier immunity of high-kappa Pr2O3 poly-Si TFT could be also obtained.	en_US
dc.identifier.journal	IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/9545
dc.identifier.wosnumber	WOS:000258483900479
dc.language.iso	en_US	en_US
dc.title	The electrical characteristics of high-kappa Pr2O3 thin-film transistors with nitrogen-implanted polysilicon films	en_US
dc.type	Proceedings Paper	en_US

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