Reliable High-Voltage Amorphous InGaZnO TFT for Monolithic 3D Integration
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Yu, Ming-Jiue | en_US |
| dc.contributor.author | Lin, Ruei-Ping | en_US |
| dc.contributor.author | Chang, Yu-Hong | en_US |
| dc.contributor.author | Hou, Tuo-Hung | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:49:25Z | |
| dc.date.available | 2017-04-21T06:49:25Z | |
| dc.date.issued | 2016 | en_US |
| dc.identifier.isbn | 978-1-4673-9478-9 | en_US |
| dc.identifier.issn | 1930-8868 | en_US |
| dc.identifier.journal | 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/136435 | |
| dc.identifier.wosnumber | WOS:000389022000056 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Reliable High-Voltage Amorphous InGaZnO TFT for Monolithic 3D Integration | en_US |
| dc.type | Proceedings Paper | en_US |
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