在有著複雜幾何與材料內容的半導體物體中激子g-factor張量

dc.contributor.author	霍斯科	zh_TW
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
dc.date.accessioned	2016-12-20T03:56:42Z
dc.date.available	2016-12-20T03:56:42Z
dc.date.issued	2016	en_US
dc.description.abstract		zh_TW
dc.description.abstract		en_US
dc.description.sponsorship	科技部	zh_TW
dc.identifier.govdoc	MOST105-2112-M009-009	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=11874764&docId=484073	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/131771
dc.language.iso	zh_TW	en_US
dc.subject		zh_TW
dc.subject		en_US
dc.title	在有著複雜幾何與材料內容的半導體物體中激子g-factor張量	zh_TW
dc.title	Exciton G-Factor Tensor in Semiconductor Nano-Objects with Complex Geometry and Material Content	en_US
dc.type	Plan	en_US

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