Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs

Abstract

We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO2/Si and Al2O3/Ge-On-Insulator (GOI) MOSFETs (EOT = 1.7nm). In additional to the comparable gate current and time-to-breakdown with AI gate C-MOSFETs, the fully NiSi and NiGe gates on SiO2/Si show mobility close to universal mobility while on Al2O3/GOI show similar to2.0X higher peak electron and hole mobility than Al on Al2O3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.