在矽基板整合40奈米三五族與鍺量子井場效電晶體作為低功率與高速無線之應用( III )

dc.contributor.author	張翼	en_US
dc.contributor.author	CHANG EDWARD YI	en_US
dc.contributor.department	國立交通大學材料科學與工程學系（所）	zh_TW
dc.date.accessioned	2014-12-13T10:42:02Z
dc.date.available	2014-12-13T10:42:02Z
dc.date.issued	2011	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC100-2120-M009-001	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=2358000&docId=373317	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/98927
dc.language.iso	zh_TW	en_US
dc.title	在矽基板整合40奈米三五族與鍺量子井場效電晶體作為低功率與高速無線之應用( III )	zh_TW
dc.title	Integration of 40 Nm Iii-V and Ge Quantum Well Fets on Si Substrate for Low-Power and High Speed Wireless Applications	en_US
dc.type	Plan	en_US

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