Synthesis, Pore Morphology, and Dielectric Property of Mesoporous Low-k Material PSMSQ using a Reactive High-Temperature Porogen, TEPSS
| dc.citation.epage | 629 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 35 | en_US |
| dc.contributor.author | Chiu, S. -Y. | en_US |
| dc.contributor.author | Hsu, H. L. | en_US |
| dc.contributor.author | Che, M. L. | en_US |
| dc.contributor.author | Leu, J. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:22:31Z | |
| dc.date.available | 2014-12-08T15:22:31Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | A high-temperature reactive porogen, triethoxy(polystyrene) silane (TEPSS) (M-w=3,500 g/mole), suitable for late-porogen removal integration scheme has been synthesized in p-xylene via atom transfer radical polymerization. TEPSS was then grafted onto poly(methyl-silsesquioxane) (MSQ) matrix (k=2.9) to circumvent possible phase separation between matrix and porogen in the hybrid approach and porogen aggregation. Our results shows porous low-k MSQ films possess uniform pore size, 24 nm for porosity up to 40%, primarily due to low PDI and reactive porogen, and the dielectric constant is decreased to 2.37 at 40% porosity. In addition, less porogen aggregation was observed at porogen loading similar to 40 v%. | en_US |
| dc.identifier.isbn | 978-1-60768-215-8 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15915 | |
| dc.identifier.wosnumber | WOS:000302650100038 | |
| dc.language.iso | en_US | en_US |
| dc.title | Synthesis, Pore Morphology, and Dielectric Property of Mesoporous Low-k Material PSMSQ using a Reactive High-Temperature Porogen, TEPSS | en_US |
| dc.type | Proceedings Paper | en_US |