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薄膜電晶體之製造方法及其結構

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201104753zh_TW
dc.contributor.author周政偉en_US
dc.contributor.author陳蔚宗en_US
dc.contributor.author冉曉雯en_US
dc.contributor.author蔡娟娟en_US
dc.date.accessioned2014-12-16T06:12:29Z
dc.date.available2014-12-16T06:12:29Z
dc.date.issued2011-02-01en_US
dc.description.abstract一種薄膜電晶體之製造方法,首先提供一基板,並於基板的側面上依序形成一介電層及一氧化物薄膜。接著,對氧化物薄膜照射紫外波段光源以進行光退火製程,而氧化物薄膜吸收紫外波段光源並產生熱能,以最佳化薄膜鍵結型態、修正薄膜可能存在之不穩定鍵結、或減少懸浮鍵結,以達修復低溫成長所得之氧化物薄膜缺陷的目的。最後,執行一光罩製程,而於氧化物薄膜上形成源極與汲極。藉由以上的製造程序以製造高效能的薄膜電晶體結構。zh_TW
dc.identifier.govdocH01L021/324zh_TW
dc.identifier.govdocH01L021/336zh_TW
dc.identifier.govdocH01L029/786zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/103647
dc.language.isozh_TWen_US
dc.title薄膜電晶體之製造方法及其結構zh_TW
dc.typePatentsen_US

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