Extraction of noise source from noise parameters with RF CMOS devices
| dc.citation.epage | 1329 | en_US |
| dc.citation.spage | 1326 | en_US |
| dc.contributor.author | Kao, YH | en_US |
| dc.contributor.author | Hsu, MT | en_US |
| dc.contributor.author | Hsu, YM | en_US |
| dc.contributor.department | 傳播研究所 | zh_TW |
| dc.contributor.department | Institute of Communication Studies | en_US |
| dc.date.accessioned | 2014-12-08T15:26:49Z | |
| dc.date.available | 2014-12-08T15:26:49Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.abstract | The noise source extraction with two-port network of RF COMS devices is presented. We descried the correlation property with three different models. The correlation of noise source with the Y model and H model show the inductive characteristics, and the ABCD (transmission matrix) shows the capacitive characteristic. All the noise parameters are measured from 0.6G-6.0GHz. | en_US |
| dc.identifier.isbn | 0-7803-7138-0 | en_US |
| dc.identifier.journal | APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19081 | |
| dc.identifier.wosnumber | WOS:000177768600320 | |
| dc.language.iso | en_US | en_US |
| dc.title | Extraction of noise source from noise parameters with RF CMOS devices | en_US |
| dc.type | Proceedings Paper | en_US |
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