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Direct Detection of Long, Periodic, ssDNA nanostructures Assembled on CMOS Transistor Arrays

dc.citation.epage+en_US
dc.citation.spage334en_US
dc.citation.woscount0en_US
dc.contributor.authorLin, Ming-Yuen_US
dc.contributor.authorChang, Sheng-Renen_US
dc.contributor.authorKao, Jiann-Shiunen_US
dc.contributor.authorChen, Hsinen_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.date.accessioned2017-04-21T06:49:40Z
dc.date.available2017-04-21T06:49:40Z
dc.date.issued2009en_US
dc.description.abstractDNA is a wonderful material for the construction of nanostructures for a variety of applications. This paper describes a novel platform integrating single-stranded DNA (ssDNA) nanotemplates with CMOS-compatible, field-effect sensors. The field-effect sensor was based on oxide-semiconductor field-effect transistors (OSFETs), which were monolithically-integrated with signal-processing circuits to enhance the signal-to-noise ratio, and to detect the construction of ssDNA nanotemplate from complex DNA-protein interactions. The ssDNA nanotemplate on the transistor arrays was prepared by isothermal rolling circle amplification (RCA) through DNA aptamer-protein recognition and self-assembly strategy. The growth of the DNA nanostructure was monitored in situ, real-time and label-free on OSFET.en_US
dc.identifier.doi10.1109/ICSENS.2009.5398146en_US
dc.identifier.isbn978-1-4244-4548-6en_US
dc.identifier.journal2009 IEEE SENSORS, VOLS 1-3en_US
dc.identifier.urihttp://dx.doi.org/10.1109/ICSENS.2009.5398146en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134953
dc.identifier.wosnumberWOS:000279891700074en_US
dc.language.isoen_USen_US
dc.titleDirect Detection of Long, Periodic, ssDNA nanostructures Assembled on CMOS Transistor Arraysen_US
dc.typeProceedings Paperen_US

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