Nonlinear terahertz spectroscopy of semiconductor nanostructures
| dc.citation.epage | 440 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 435 | en_US |
| dc.citation.volume | 78 | en_US |
| dc.citation.woscount | 18 | |
| dc.contributor.author | Luo, C | en_US |
| dc.contributor.author | Reimann, K | en_US |
| dc.contributor.author | Woerner, M | en_US |
| dc.contributor.author | Elsaesser, T | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:30Z | |
| dc.date.available | 2014-12-08T15:39:30Z | |
| dc.date.issued | 2004-03-01 | en_US |
| dc.description.abstract | Nonlinear frequency conversion and electro-optic sampling allow for the generation and phase-resolved characterization of few-cycle pulses in the frequency range up to 50 THz. Electric field transients with amplitudes of up to several MV/cm are applied to study coherent nonlinear excitations of low-dimensional semiconductors. We report the first observation of Rabi oscillations on intersubband transitions of electrons in GaAs/AlGaAs quantum wells. Frequency and phase of such oscillations are controlled in the 0.3- to 2.5-THz range via the strength and shape of the mid-infrared driving pulse. | en_US |
| dc.identifier.doi | 10.1007/s00339-003-2400-5 | en_US |
| dc.identifier.issn | 0947-8396 | en_US |
| dc.identifier.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s00339-003-2400-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26964 | |
| dc.identifier.wosnumber | WOS:000188347700003 | |
| dc.language.iso | en_US | en_US |
| dc.title | Nonlinear terahertz spectroscopy of semiconductor nanostructures | en_US |
| dc.type | Article | en_US |