Radiation,Temperature and Gain in n-p-n Planar Transistor

Abstract

The dependence of current amplification factor on emitter current, temperature, resistivities, surface treatments as well as on the radiation effects are investigated. The experiments show that the current amplification factor is more dependent on recombination and scattering mechanism than the other effects. Temperature effect is profound also, high temperature causes high gain(400% at 200℃), low temperature causes very low gain (5% at liquid oxygen). Both the neutron and the Υ-ray irradiation cause the Frenkel defect in the crystal and thus also decrease the current gain preatly. Recovery of gain is obtained by heating at 300℃, 150℃ etc. in dry nitrogen atmosphere and then followed by quick annealing.