METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20110316001 | zh_TW |
| dc.contributor.author | Lee Wei I | en_US |
| dc.contributor.author | Huang Hsin Hsiung | en_US |
| dc.contributor.author | Chen Kuei Ming | en_US |
| dc.contributor.author | Yeh Yen Hsien | en_US |
| dc.date.accessioned | 2014-12-16T06:15:18Z | |
| dc.date.available | 2014-12-16T06:15:18Z | |
| dc.date.issued | 2011-12-29 | en_US |
| dc.description.abstract | A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth temperature of 900-950° C. to a second growth temperature of 1000-1050° C. at a temperature-rising rate of 0.5-10° C./min. The lattice quality of the temperature ramping nitride layer is slowly transformed with the layer height, so that a stress induced by lattice mismatch between a sapphire substrate and a gallium nitride (GaN) layer is relieved. | zh_TW |
| dc.identifier.govdoc | H01L029/20 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105232 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF | zh_TW |
| dc.type | Patents | en_US |