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Microwave properties of YBa2Cu3O7-x deposited on MgO substrates

dc.citation.epage1574en_US
dc.citation.issueen_US
dc.citation.spage1573en_US
dc.citation.volume282en_US
dc.contributor.authorHsieh, MCen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:01:33Z
dc.date.available2014-12-08T15:01:33Z
dc.date.issued1997-08-01en_US
dc.description.abstractWith pre-annealed treatments, high density of atomic steps were formed on the surface of the MgO substrate. The early-stage microstructure of YBa2Cu3O7-x thin films was evolved with a step-flow growth mode by pulsed laser deposition. On the as-polished MgO substrates the Volmer-Weber-type island growth mode was dominant. By means of microstrip line measurement, it was found that the films grown on the pre-annealed substrate not only have a higher critical current densities but also have a lower microwave loss than those of films deposited on as-polished substrate. The distinction existed even when the deposition condition were not optimized.en_US
dc.identifier.doi10.1016/S0921-4534(97)00938-6en_US
dc.identifier.issn0921-4534en_US
dc.identifier.journalPHYSICA Cen_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4534(97)00938-6en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/390
dc.identifier.wosnumberWOS:A1997XZ90600226
dc.language.isoen_USen_US
dc.titleMicrowave properties of YBa2Cu3O7-x deposited on MgO substratesen_US
dc.typeArticle; Proceedings Paperen_US

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