Improvement of electrical characteristics for fluorine-ion implanted poly-Si TFTs using Pr2O3 gate dielectric

Abstract

High-performance fluorine-ion-implanted poly-Si thin-film transistors with high-k Pr2O3 gate dielectric are demonstrated for the first time. Experimental results have shown that the fluorine-doped poly-Si channel would effectively minimize the trap state densities, leading to improved electrical characteristics even without any hydrogenation process or advanced crystallization techniques. In addition, the presence of fluorine in poly-Si TFT obviously exhibits superior electrical reliability. This unique low cost, and effective fluorine ion implantation technique makes the Pr2O3 gate dielectric TFT very suitable for low power peripheral driving circuit applications.