蕭特基能障金氧半電晶體元件研製與理論分析---總計畫
| dc.contributor.author | 黃調元 | en_US |
| dc.contributor.author | TIAO-YUANHUANG | en_US |
| dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:39:38Z | |
| dc.date.available | 2014-12-13T10:39:38Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC90-2215-E009-079 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=665743&docId=126385 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/96696 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 蕭特基能障 | zh_TW |
| dc.subject | 理論分析 | zh_TW |
| dc.subject | 金氧半導體元件 | zh_TW |
| dc.subject | Schotty barrier | en_US |
| dc.subject | Theoretical analysis | en_US |
| dc.subject | MOS device | en_US |
| dc.title | 蕭特基能障金氧半電晶體元件研製與理論分析---總計畫 | zh_TW |
| dc.title | Fabrication, Characterization, and Theoretical Analysis on Schottky Barrier MOS Devices | en_US |
| dc.type | Plan | en_US |
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