Ultra-Low Voltage Mixed TFET-MOSFET 8T SRAM Cell

Abstract

In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, V-min and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixed mode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation.