Characteristics of Modified-Schottky-Barrier (MSB) FinFETs
| dc.citation.epage | 119 | en_US |
| dc.citation.spage | 118 | en_US |
| dc.contributor.author | Lin, CP | en_US |
| dc.contributor.author | Tsui, BY | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:38Z | |
| dc.date.available | 2014-12-08T15:25:38Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | It has been reported that Modified-Schottky-Barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device. | en_US |
| dc.identifier.isbn | 0-7803-9058-X | en_US |
| dc.identifier.journal | 2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/18053 | |
| dc.identifier.wosnumber | WOS:000231405800046 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of Modified-Schottky-Barrier (MSB) FinFETs | en_US |
| dc.type | Proceedings Paper | en_US |
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