Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution
| dc.citation.epage | 168 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 165 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.contributor.author | Chen, Yu-Chung | en_US |
| dc.contributor.author | Chao, Yu-Cheng | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:29:42Z | |
| dc.date.available | 2014-12-08T15:29:42Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved. | en_US |
| dc.identifier.doi | 10.1149/1.3481232 | en_US |
| dc.identifier.isbn | 978-1-60768-174-8 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | THIN FILM TRANSISTORS 10 (TFT 10) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3481232 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21334 | |
| dc.identifier.wosnumber | WOS:000315444100019 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution | en_US |
| dc.type | Proceedings Paper | en_US |