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77-110GHz 90nm-CMOS Receiver Design

dc.citation.epage235en_US
dc.citation.spage233en_US
dc.contributor.authorYu, Jo-Han (Judy)en_US
dc.contributor.authorLiao, Chien-Hsiungen_US
dc.contributor.authorHsieh, Cheng-Huangen_US
dc.contributor.authorHu, Roberten_US
dc.contributor.authorNiu, Dow-Chihen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2014-12-08T15:34:49Z
dc.date.available2014-12-08T15:34:49Z
dc.date.issued2013en_US
dc.description.abstractThis manuscript details our latest 90nm CMOS W-band receiver design where the RF LNA, resistive mixer, IF differential amplifier and LO tripler have been integrated, thus allows the whole 77-110GHz spectrum to be down-converted into quasi-DC-33GHz using a much lower microwave frequency. In addition to being used in our broadband receiver array project, this W-band circuit is also eligible for the conventional 77/94GHz vehicular and surveillance applications. This 90nm-CMOS receiver with LO tripler has around -0.4dB conversion gain, 18dB noise figure, 48dB LO-IF isolation, and its chip size is 950-times-750um(2), with 114mW power dissipation at 1.3V DC bias.en_US
dc.identifier.isbn978-1-4799-1472-2en_US
dc.identifier.journal2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/23703
dc.identifier.wosnumberWOS:000330851900074
dc.language.isoen_USen_US
dc.subjectW-banden_US
dc.subjectmillimeter-waveen_US
dc.subjectMMICen_US
dc.subjectreceiveren_US
dc.subjecttripleren_US
dc.subjectmixeren_US
dc.subjectCMOSen_US
dc.title77-110GHz 90nm-CMOS Receiver Designen_US
dc.typeProceedings Paperen_US

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