高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(II)
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:31:32Z | |
| dc.date.available | 2014-12-13T10:31:32Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC93-2215-E009-026 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1026678&docId=195176 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/91018 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(II) | zh_TW |
| dc.title | Key Reliability Issues and Interface Characterization Techniques for High-K Nano-CMOS Devices(II) | en_US |
| dc.type | Plan | en_US |