Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells
| dc.citation.epage | 673 | en_US |
| dc.citation.issue | 5-8 | en_US |
| dc.citation.spage | 671 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.contributor.author | Lee, HC | en_US |
| dc.contributor.author | Sun, KW | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:57Z | |
| dc.date.available | 2014-12-08T15:40:57Z | |
| dc.date.issued | 2003-05-01 | en_US |
| dc.description.abstract | In this presentation, we report the calculated results on hot electron relaxation through inter- and intra-subband scatterings with LO phonons in quantum well structures. The scattering rates were calculated for electrons excited both in the gamma valley and L valleys. The types of optical phonons adapted in our model are determined based on the dielectric continuum model. We have also studied the dependence of the scatterings on the structure parameters of the quantum well. (C) 2003 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0026-2692(03)00093-4 | en_US |
| dc.identifier.issn | 0026-2692 | en_US |
| dc.identifier.journal | MICROELECTRONICS JOURNAL | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0026-2692(03)00093-4 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27904 | |
| dc.identifier.wosnumber | WOS:000183607400083 | |
| dc.language.iso | en_US | en_US |
| dc.subject | inter-subband | en_US |
| dc.subject | quantum wells | en_US |
| dc.subject | phonons | en_US |
| dc.title | Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells | en_US |
| dc.type | Article; Proceedings Paper | en_US |