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AlSixOy as a high transmittance embedded material for AttPSM and the correlation between the chemical compositions and optical properties of AlSixOy in 193 nm lithography

dc.citation.epage13en_US
dc.citation.spage12en_US
dc.contributor.authorLin, CMen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:27:05Z
dc.date.available2014-12-08T15:27:05Z
dc.date.issued2000en_US
dc.identifier.isbn4-89114-004-6en_US
dc.identifier.journalMICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19309
dc.identifier.wosnumberWOS:000166793600006
dc.language.isoen_USen_US
dc.titleAlSixOy as a high transmittance embedded material for AttPSM and the correlation between the chemical compositions and optical properties of AlSixOy in 193 nm lithographyen_US
dc.typeProceedings Paperen_US

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