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Characteristics of GaN-Based Photonic Crystal Surface Emitting Lasers with Central Defects

dc.contributor.authorWu, Tzeng-Tsongen_US
dc.contributor.authorWeng, Peng-Hsiangen_US
dc.contributor.authorHou, Yen-Juen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:29:21Z
dc.date.available2014-12-08T15:29:21Z
dc.date.issued2012en_US
dc.description.abstractThe GaN-based Photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The characteristics for PCSELs with different central defects were calculated and matched well with experimental results. (c) 2011 Optical Society of Americaen_US
dc.identifier.isbn978-1-55752-933-6en_US
dc.identifier.journal2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21140
dc.identifier.wosnumberWOS:000310362401174
dc.language.isoen_USen_US
dc.titleCharacteristics of GaN-Based Photonic Crystal Surface Emitting Lasers with Central Defectsen_US
dc.typeProceedings Paperen_US

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