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Investigating MLC Variation of Filamentary and Non-filamentary RRAM

dc.citation.woscount0en_US
dc.contributor.authorLiu, Jen-Chiehen_US
dc.contributor.authorWang, I-Tingen_US
dc.contributor.authorHsu, Chung-Weien_US
dc.contributor.authorLuo, Wun-Chengen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2015-12-02T03:00:54Z
dc.date.available2015-12-02T03:00:54Z
dc.date.issued2014-01-01en_US
dc.description.abstracten_US
dc.identifier.isbn978-1-4799-2217-8en_US
dc.identifier.issnen_US
dc.identifier.journalPROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/128530
dc.identifier.wosnumberWOS:000358865800045en_US
dc.language.isoen_USen_US
dc.titleInvestigating MLC Variation of Filamentary and Non-filamentary RRAMen_US
dc.typeProceedings Paperen_US

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