Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
| dc.citation.epage | 124 | en_US |
| dc.citation.spage | 123 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chang, You-Tai | en_US |
| dc.contributor.author | Li, Pei-Wen | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2020-01-02T00:03:27Z | |
| dc.date.available | 2020-01-02T00:03:27Z | |
| dc.date.issued | 2019-01-01 | en_US |
| dc.description.abstract | Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels. | en_US |
| dc.identifier.issn | 2161-4636 | en_US |
| dc.identifier.journal | 2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/153323 | |
| dc.identifier.wosnumber | WOS:000501001400060 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Characterization of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: