Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer
| dc.citation.epage | 773 | en_US |
| dc.citation.issue | 4-7 | en_US |
| dc.citation.spage | 768 | en_US |
| dc.citation.volume | 202 | en_US |
| dc.contributor.author | Ho, Chia-Cheng | en_US |
| dc.contributor.author | Chiou, Bi-Shiou | en_US |
| dc.contributor.author | Chang, Li-Chun | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Innovative Packaging Research Center | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Innovative Packaging Research Center | en_US |
| dc.date.accessioned | 2014-12-08T15:05:10Z | |
| dc.date.available | 2014-12-08T15:05:10Z | |
| dc.date.issued | 2007-12-15 | en_US |
| dc.description.abstract | The microstructure, crystalline phase, surface morphology, and dielectric properties of a sandwich structure of Ba0.7Sr0.3TiO3/Cr/ Ba0.7Sr0.3TiO3 (BST/Cr/BST) dielectric are characterized to understand the influence of the nano-Cr interlayer. BST dielectrics inserted with Cr film of thickness ranged from 2 nm to 15 nm all show the crystalline cubic phase. However, TiO2 layer is formed on the upper BST layer after the BST/Cr/BST dielectrics are annealed at 900 degrees C in O-2 atmosphere for one hour. In this study, TEM, AFM, SEM, X-ray diffraction, and AES are employed to investigate the microstructure evolution of the BST/Cr/BST dielectrics after annealing. The correlations between the microstructure and the dielectric properties of the Pt/BST/Cr/BST/Pt capacitors with various Cr thicknesses are explored. (C) 2007 Elsevier B.V. All tights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.surfcoat.2007.05.077 | en_US |
| dc.identifier.issn | 0257-8972 | en_US |
| dc.identifier.journal | SURFACE & COATINGS TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.surfcoat.2007.05.077 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3708 | |
| dc.identifier.wosnumber | WOS:000251618900033 | |
| dc.language.iso | en_US | en_US |
| dc.subject | dielectric material | en_US |
| dc.subject | interlayer | en_US |
| dc.subject | microstructure | en_US |
| dc.subject | capacitor | en_US |
| dc.subject | BST | en_US |
| dc.title | Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayer | en_US |
| dc.type | Article; Proceedings Paper | en_US |