Type-I/type-II exciton in strained Si/SiGe multi-QWs

Abstract

Using magneto-luminescence (ML) measurement, we have observed the formation of magneto-excitons with either type-I or type-II band alignment depending on the strain distribution in the Si/SiGe quantum well structures. This observation is consistent with the analysis of strain-induced band shifting and exciton-transition energy. (c) 2007 Elsevier B.V. All rights reserved.