Surface roughness of sputtered ZnO films
| dc.citation.epage | 71 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 68 | en_US |
| dc.citation.volume | T126 | en_US |
| dc.contributor.author | Lin, Y. S. | en_US |
| dc.contributor.author | Hsu, K. C. | en_US |
| dc.contributor.author | Huang, Y. M. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:49Z | |
| dc.date.available | 2014-12-08T15:15:49Z | |
| dc.date.issued | 2006-09-01 | en_US |
| dc.description.abstract | ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x- ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong ( 002) preferential orientation. The influence of the RF power and target-to-substrate distance (D-ts) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D-ts, root-mean-square (RMS) surface roughnesses of < 0.8 nm are achieved. | en_US |
| dc.identifier.doi | 10.1088/0031-8949/2006/T126/016 | en_US |
| dc.identifier.issn | 0031-8949 | en_US |
| dc.identifier.journal | PHYSICA SCRIPTA | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0031-8949/2006/T126/016 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11800 | |
| dc.identifier.wosnumber | WOS:000246789700017 | |
| dc.language.iso | en_US | en_US |
| dc.title | Surface roughness of sputtered ZnO films | en_US |
| dc.type | Article; Proceedings Paper | en_US |