Performance of AlGaN/GaN heterostrucrure FETs over temperatures

dc.citation.epage	2268	en_US
dc.citation.spage	2265	en_US
dc.contributor.author	Lee, CC	en_US
dc.contributor.author	Shih, CF	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Tu, RC	en_US
dc.contributor.author	Chuo, CC	en_US
dc.contributor.author	Chi, J	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:25:46Z
dc.date.available	2014-12-08T15:25:46Z
dc.date.issued	2004	en_US
dc.description.abstract	In this article, a comparison on the device performance of the undoped and modulation-doped AlGaN/GaN HFETs over temperatures was presented. The results obtained indicated that the device structure has a significant influence on the device performance. The modulation-doped devices are superior to the undoped devices over the temperatures studied. The stability (the temperature dependence of device performance), however. is not as good as the undoped devices.	en_US
dc.identifier.isbn	0-7803-8511-X	en_US
dc.identifier.journal	2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/18189
dc.identifier.wosnumber	WOS:000227342202163
dc.language.iso	en_US	en_US
dc.title	Performance of AlGaN/GaN heterostrucrure FETs over temperatures	en_US
dc.type	Proceedings Paper	en_US

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