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半導體-絕緣體-半導體(SIS)異質接面結構應用於光檢測器製備之研究

dc.contributor.author謝宗雍zh_TW
dc.contributor.authorHSIEH TSUNG-EONGen_US
dc.contributor.department國立交通大學材料科學與工程學系(所)zh_TW
dc.date.accessioned2016-03-29T00:01:15Z
dc.date.available2016-03-29T00:01:15Z
dc.date.issued2016en_US
dc.description.sponsorship科技部zh_TW
dc.identifier.govdocMOST104-2221-E009-034-MY3zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11727176&docId=480948en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/130983
dc.language.isozh_TWen_US
dc.title半導體-絕緣體-半導體(SIS)異質接面結構應用於光檢測器製備之研究zh_TW
dc.titleA Study of Semiconductor-Insulator-Semiconductor (SIS) Heterojunction Structure Applied to the Fabrication of Photodetectorsen_US
dc.typePlanen_US

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