砷化銦/砷化鋁銦應力補償之高速電晶體
| dc.contributor.author | 蔡中 | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:18Z | |
| dc.date.available | 2014-12-13T10:37:18Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-058 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=444591&docId=80530 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94528 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 應力補償 | zh_TW |
| dc.subject | 高速電晶體 | zh_TW |
| dc.subject | 砷化銦 | zh_TW |
| dc.subject | 砷化鋁銦 | zh_TW |
| dc.subject | 量子井 | zh_TW |
| dc.subject | Strain compensatation | en_US |
| dc.subject | High speed transistor | en_US |
| dc.subject | InAs | en_US |
| dc.subject | InAlAs | en_US |
| dc.subject | Quantum well | en_US |
| dc.title | 砷化銦/砷化鋁銦應力補償之高速電晶體 | zh_TW |
| dc.title | InAs/InAlAs Strain-Compensated Pseudomorphic HEMT | en_US |
| dc.type | Plan | en_US |