ESD PROTECTION STRUCTURE FOR 3D IC
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120153437 | zh_TW |
| dc.contributor.author | Chen Kuan-Neng | en_US |
| dc.contributor.author | Lai Ming-Fang | en_US |
| dc.contributor.author | Chen Hung-Ming | en_US |
| dc.date.accessioned | 2014-12-16T06:15:12Z | |
| dc.date.available | 2014-12-16T06:15:12Z | |
| dc.date.issued | 2012-06-21 | en_US |
| dc.description.abstract | An electrostatic discharge (ESD) protection structure for a 3D IC is provided. The ESD protection structure includes a first active layer, a through-silicon via (TSV) device and a second active layer. The TSV is disposed in the first active layer, and the second active layer is stacked with the first active layer. The second active layer includes a substrate and an ESD protection device, wherein the ESD protection device having a doping area embedded in the substrate, and the ESD protection device electrically connects the TSV device. | zh_TW |
| dc.identifier.govdoc | H01L029/06 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105166 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | ESD PROTECTION STRUCTURE FOR 3D IC | zh_TW |
| dc.type | Patents | en_US |