Fabrication of InGaN/GaN Nanodisk Structure by using Bio-template and Neutral Beam Etching Process

Abstract

Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 x 10(11) cm(-2) with 6-nm in diameter and 15-nm-high nanopillars.