Use of Spin-On-Hard Mask Materials for nano scale patterning technology
| dc.citation.volume | 7140 | en_US |
| dc.contributor.author | Wu, Wen-Hao | en_US |
| dc.contributor.author | Chang, Edward Y. | en_US |
| dc.contributor.author | Cheon, Hwan-Sung | en_US |
| dc.contributor.author | Kim, Sang Kyun | en_US |
| dc.contributor.author | Cho, Hyeon Mo | en_US |
| dc.contributor.author | Yoon, Kyong-Ho | en_US |
| dc.contributor.author | Kim, Jong Seob | en_US |
| dc.contributor.author | Chang, Tuwon | en_US |
| dc.contributor.author | Shin, Seongho | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:44:56Z | |
| dc.date.available | 2014-12-08T15:44:56Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On-Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute. | en_US |
| dc.identifier.doi | 10.1117/12.804695 | en_US |
| dc.identifier.isbn | 978-0-8194-7381-3 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | LITHOGRAPHY ASIA 2008 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.804695 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30342 | |
| dc.identifier.wosnumber | WOS:000289407400066 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Amorphous carbon layer (ACL) | en_US |
| dc.subject | etch selectivity | en_US |
| dc.subject | spin-on organic hardmask | en_US |
| dc.subject | tri-layer resist process (TLR) | en_US |
| dc.title | Use of Spin-On-Hard Mask Materials for nano scale patterning technology | en_US |
| dc.type | Article | en_US |