HIGH EFFICIENCY GALLIUM ARSENIDE SOLAR CELLS USING INDIUM-TIN-OXIDE NANO-COLUMNS
| dc.citation.epage | 490 | en_US |
| dc.citation.spage | 487 | en_US |
| dc.contributor.author | Chang, C. H. | en_US |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Chiu, C. H. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:40Z | |
| dc.date.available | 2014-12-08T15:02:40Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | An array of conductive Indium-Tin-Oxide (ITO) nano-columns is deposited on GaAs solar cells using the oblique-angle electron-beam deposition method. Calculations based on a rigorous coupled-wave analysis method show that such ITO nano-columns offer superior angular and spectral anti-reflective (AR) properties. The optical characteristics of the ITO nano-columns are described. The conversion efficiency of GaAs solar cells with ITO nano-columns as the AR coating is increased by 23%, mainly limited by the quantum efficiency at the wavelengths below 600nm. | en_US |
| dc.identifier.isbn | 978-1-4244-1640-0 | en_US |
| dc.identifier.issn | 0160-8371 | en_US |
| dc.identifier.journal | PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1319 | |
| dc.identifier.wosnumber | WOS:000273995000111 | |
| dc.language.iso | en_US | en_US |
| dc.title | HIGH EFFICIENCY GALLIUM ARSENIDE SOLAR CELLS USING INDIUM-TIN-OXIDE NANO-COLUMNS | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: