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Enhancement on Photovoltaic Properties of Boron-doped Super-high Density Si Quantum Dot Thin Film

dc.citation.woscount0en_US
dc.contributor.authorHuang, Pin-Rueien_US
dc.contributor.authorChen, You-Jengen_US
dc.contributor.authorChang, Jia-Rueien_US
dc.contributor.authorKuo, Kuang-Yangen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:49:14Z
dc.date.available2017-04-21T06:49:14Z
dc.date.issued2014en_US
dc.description.abstractBoron-doped super-high density nano-crystalline Si quantum dot thin film is demonstrated by utilizing a gradient Si-rich oxide multilayer structure. The boron doping effect and its significant influence on photovoltaic properties are observed and discussed.en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/136229
dc.identifier.wosnumberWOS:000369908601163en_US
dc.language.isoen_USen_US
dc.titleEnhancement on Photovoltaic Properties of Boron-doped Super-high Density Si Quantum Dot Thin Filmen_US
dc.typeProceedings Paperen_US

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