CARBON-DOPED SILICON NITRIDE THIN FILM AND MANUFACTURING METHOD AND DEVICE THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130330482 | zh_TW |
| dc.contributor.author | Leu Jihperng | en_US |
| dc.contributor.author | Tu Hung-En | en_US |
| dc.contributor.author | Chiu Wei-Gan | en_US |
| dc.date.accessioned | 2014-12-16T06:14:53Z | |
| dc.date.available | 2014-12-16T06:14:53Z | |
| dc.date.issued | 2013-12-12 | en_US |
| dc.description.abstract | The present invention relates to carbon-doped silicon nitride thin film and forming method and device thereof The carbon-doped silicon nitride thin film is prepared by using a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond. The method for forming a carbon-doped silicon nitride thin film includes: providing a precursor having at least one of bis(dimethylamino)diethylsilane, N,N-Dimethyltrimethylsilylamine and a cyclic structure with a N—Si bond to form the carbon-doped silicon nitride thin film. The device for forming the carbon-doped silicon nitride thin film includes a reactor and a container with the aforementioned precursor coupled to the reactor. | zh_TW |
| dc.identifier.govdoc | C23C016/34 | zh_TW |
| dc.identifier.govdoc | C07F007/10 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104970 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | CARBON-DOPED SILICON NITRIDE THIN FILM AND MANUFACTURING METHOD AND DEVICE THEREOF | zh_TW |
| dc.type | Patents | en_US |