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異質接面電晶體的安全操作範圍研究( III )

dc.contributor.author李建平zh_TW
dc.contributor.authorLEE CHIEN-PINGen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
dc.date.accessioned2016-03-28T08:17:32Z
dc.date.available2016-03-28T08:17:32Z
dc.date.issued2015en_US
dc.description.sponsorship科技部zh_TW
dc.identifier.govdocMOST104-2221-E009-004zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11493320&docId=465503en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/130140
dc.language.isozh_TWen_US
dc.title異質接面電晶體的安全操作範圍研究( III )zh_TW
dc.titleStudy of Ruggedness and the Safe Operating Area of GaAs Based Heterojunction Bipolar Transistors( III )en_US
dc.typePlanen_US

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