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半導體特性-高壓相變、超輻射及量子傳輸研究(I)

dc.contributor.author褚德三en_US
dc.contributor.authorCHUU DER SANen_US
dc.contributor.department國立交通大學電子物理學系zh_TW
dc.date.accessioned2014-12-13T10:28:47Z
dc.date.available2014-12-13T10:28:47Z
dc.date.issued2000en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC89-2112-M009-065zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=544998&docId=100291en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/88622
dc.language.isozh_TWen_US
dc.title半導體特性-高壓相變、超輻射及量子傳輸研究(I)zh_TW
dc.titleStudies on the Physical Properties of Semiconductors(I)en_US
dc.typePlanen_US

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