A numerical iterative method for solving Schrodinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
| dc.citation.epage | 312 | en_US |
| dc.citation.issue | 1-3 | en_US |
| dc.citation.spage | 309 | en_US |
| dc.citation.volume | 169 | en_US |
| dc.contributor.author | Li, YM | en_US |
| dc.contributor.author | Yu, SM | en_US |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:18:51Z | |
| dc.date.available | 2014-12-08T15:18:51Z | |
| dc.date.issued | 2005-07-01 | en_US |
| dc.description.abstract | Numerical solution of the Schrodinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (Ml) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method. (c) 2005 Elsevier B.V All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.cpc.2005.03.069 | en_US |
| dc.identifier.issn | 0010-4655 | en_US |
| dc.identifier.journal | COMPUTER PHYSICS COMMUNICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.cpc.2005.03.069 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13561 | |
| dc.identifier.wosnumber | WOS:000230528100067 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Schrodinger and Poisson equations | en_US |
| dc.subject | quantum corrected Poisson equation | en_US |
| dc.subject | numerical iterative method | en_US |
| dc.subject | monotone iterative method | en_US |
| dc.subject | nanoscale MOS structures | en_US |
| dc.title | A numerical iterative method for solving Schrodinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures | en_US |
| dc.type | Article; Proceedings Paper | en_US |