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The Crystalline and Optical Properties of (11(2)over-bar2) Semipolar GaN and InGaN/GaN MQWs on (1(1)over-bar00) M-Sapphire

dc.citation.woscount0en_US
dc.contributor.authorLi, Yun-Jingen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorSou, Kuok-Panen_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorChang, Ruey-Wenen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.department電機學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2015-12-02T03:00:52Z
dc.date.available2015-12-02T03:00:52Z
dc.date.issued2013-01-01en_US
dc.description.abstractWe report the growth temperature effect on the crystalline and optical properties of (11 (2) over bar2) semipolar GaN and InGaN/GaN MQWs. It shows that a lower growth temperature at 1020 degrees C produces better crystalline and optical properties.en_US
dc.identifier.isbn978-1-55752-973-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/128503
dc.identifier.wosnumberWOS:000355262504247en_US
dc.language.isoen_USen_US
dc.titleThe Crystalline and Optical Properties of (11(2)over-bar2) Semipolar GaN and InGaN/GaN MQWs on (1(1)over-bar00) M-Sapphireen_US
dc.typeProceedings Paperen_US

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