Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement
| dc.citation.epage | 60 | en_US |
| dc.citation.spage | 59 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Yu, Chang-Hung | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2015-07-21T08:31:30Z | |
| dc.date.available | 2015-07-21T08:31:30Z | |
| dc.date.issued | 2013-01-01 | en_US |
| dc.description.abstract | en_US | |
| dc.identifier.isbn | 978-1-4799-0811-0; 978-1-4799-0812-7 | en_US |
| dc.identifier.issn | 1548-3770 | en_US |
| dc.identifier.journal | 2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124974 | |
| dc.identifier.wosnumber | WOS:000347466000035 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement | en_US |
| dc.type | Proceedings Paper | en_US |
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