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Damage of light-emitting diodes induced by high reverse-bias stress

dc.citation.epage997en_US
dc.citation.issue3en_US
dc.citation.spage994en_US
dc.citation.volume311en_US
dc.contributor.authorChen, N. C.en_US
dc.contributor.authorWang, Y. N.en_US
dc.contributor.authorWang, Y. S.en_US
dc.contributor.authorLien, W. C.en_US
dc.contributor.authorChen, Y. C.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:17:49Z
dc.date.available2014-12-08T15:17:49Z
dc.date.issued2009-01-15en_US
dc.description.abstractThe ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse Current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated. (c) 2008 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcrysgro.2008.09.123en_US
dc.identifier.issn0022-0248en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2008.09.123en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12901
dc.identifier.wosnumberWOS:000264161700137
dc.language.isoen_USen_US
dc.subjectDefectsen_US
dc.subjectMetal organic chemical vapor depositionen_US
dc.subjectNitridesen_US
dc.subjectLight-emitting diodeen_US
dc.titleDamage of light-emitting diodes induced by high reverse-bias stressen_US
dc.typeArticle; Proceedings Paperen_US

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