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Electromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallization

dc.citation.epage1227en_US
dc.citation.issue11en_US
dc.citation.spage1222en_US
dc.citation.volume32en_US
dc.contributor.authorHsu, YCen_US
dc.contributor.authorShao, TLen_US
dc.contributor.authorYang, CJen_US
dc.contributor.authorChen, Cen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:40:08Z
dc.date.available2014-12-08T15:40:08Z
dc.date.issued2003-11-01en_US
dc.description.abstractThis paper investigates the electromigration-induced failures of SnAg3.8Cu0.7 flip-chip solder joints. An under-bump metallization (UBM) of a Ti/Cr-Cu/Cu trilayer was deposited on the chip side, and a Cu/Ni(P)/Au pad was deposited on the BT board side. Electromigration damages were observed in the bumps under a current density of 2 x 10(4) A/cm(2) and 1 x 10(4) A/cm(2) at 100 degreesC and 150 degreesC. The failures were found to be at the cathode/chip side, and the current crowding effect played an important role in the failures. Copper atoms were found to move in the direction of the electron flow to form intermetallic compounds (IMCs) at the interface of solder and pad metallization as a result of current stressing.en_US
dc.identifier.issn0361-5235en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27414
dc.identifier.wosnumberWOS:000186990100015
dc.language.isoen_USen_US
dc.subjectelectromigrationen_US
dc.subjectflip chipen_US
dc.subjectunder-bump metallizationen_US
dc.subjectBT boarden_US
dc.subjectcurrent crowdingen_US
dc.subjectintermetallic compoundsen_US
dc.titleElectromigration study in SnAg3.8Cu0.7 solder joints on Ti/Cr-Cu/Cu under-bump metallizationen_US
dc.typeArticle; Proceedings Paperen_US

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