Factors Affecting Hysteresis in the Transfer Curves of a-IGZO TFTs under Illumination and Raised Temperature

dc.citation.epage	412	en_US
dc.citation.spage	409	en_US
dc.citation.woscount	1	en_US
dc.contributor.author	Chen, Yi-Jung	en_US
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.date.accessioned	2017-04-21T06:49:50Z
dc.date.available	2017-04-21T06:49:50Z
dc.date.issued	2015	en_US
dc.description.abstract	For different environments of illumination and temperature, we investigate the hysteresis in the transfer characteristic of a-IGZO TFT by controlling the sweep speed of the gate voltage. The hysteresis can be affected by the response time for the transition of oxygen vacancies states to the ionized states and its amount.	en_US
dc.identifier.isbn	978-1-4799-9928-6	en_US
dc.identifier.issn	1946-1550	en_US
dc.identifier.journal	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/136109
dc.identifier.wosnumber	WOS:000380466200104	en_US
dc.language.iso	en_US	en_US
dc.title	Factors Affecting Hysteresis in the Transfer Curves of a-IGZO TFTs under Illumination and Raised Temperature	en_US
dc.type	Proceedings Paper	en_US

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